Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the two acids, attributed to an anisotropy in step edge reactivity. The morphology of the etch pits in bulk InP suggests that the dislocations are ori...

InP-based Waveguides: comparison of ECR Plasma Etching and Wet-chemical Etching

1 COBRA Inter-University Research Institute on Communication Technology Eindhoven University of Technology –Faculty of Electrical Engineering Telecommunications Technology and Electromagnetics – Opto-Electronic Devices Group P.O.Box 513, 5600 MB Eindhoven, The Netherlands E-mail: [email protected] 2 Department of Electronic Materials Engineering, Research School of Physical Sciences and En...

Wet-Chemical Etching and Cleaning of Silicon

A Introduction Research and manufacturing related to silicon devices, circuits, and systems often relies on the wet-chemical etching of silicon wafers. The dissolution of silicon using liquid solutions is needed for deep etching and micromachining, shaping, and cleaning. Also, wet-chemistries are often used for defect delineation in single crystal silicon materials. In this paper, a review of t...

Three-Dimensional Lithography Using Combination of Nanoscale Processing and Wet Chemical Etching

Semiconductor Surface-Molecule Interactions Wet Etching of InP by a-hydroxy Acids

Controllable etching and surface passivation of InP semiconductors are desirable for removing damaged surfaces and obtaining good electronic properties. We have observed that organic acids ~a-hydroxy acids: tartaric, lactic, citric, and malic!, when used in conjunction with HCl to etch the ~100! surface of InP results in smoother and defect-free surfaces, in comparison to etches based on inorga...